DMTH15H017SPSW-13

$0.61

Description：MOSFET BVDSS: 101V~250V PowerDI5
Series：-
Mfr：Diodes Incorporated
Package：Bulk

SKU:ecd3e2c45c6d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 101V~250V PowerDI5
Series：-
Mfr：Diodes Incorporated
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：11A (Ta), 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：8V, 10V
Rds On (Max) @ Id, Vgs：19mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2344 pF @ 75 V
FET Feature：-
Power Dissipation (Max)：1.5W (Ta), 107W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH15H017SPSW-13

Overview

The DMTH15H017SPSW-13 is a 150V N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a maximum on-resistance of 19mΩ at VGS=10V and 22mΩ at VGS=8V. The device supports continuous drain currents of 61A at TC=+25°C and 40A at TC=+100°C. It operates up to +175°C junction temperature with low input capacitance for fast switching.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
100% unclamped inductive switching (UIS) tested in production for reliability
Thermally efficient package design for cooler running applications
Low RDS(on) minimizes on-state losses while maintaining fast switching speed

Applications

Motor control systems
DC-DC converters
Power management circuits

Procurement Notes

Verify the specific ordering suffix -13 corresponds to the tape and reel packing quantity of 2,500 units as documented. Confirm that the PowerDI5060-8/SWP package type matches your PCB footprint requirements. Ensure the component meets RoHS and halogen-free specifications if required by your manufacturing standards. Cross-reference the JEDEC qualification status for high-reliability application needs.

Selection Notes

Select this component when a 150V rating and low on-resistance are critical for efficiency. The PowerDI5060-8 package suits thin applications requiring a profile under 1.1mm. Consider the thermal resistance values for your specific heatsinking or board layout conditions. Verify gate drive voltage compatibility with the specified threshold and on-resistance test conditions.

Part Context

This part belongs to Diodes Incorporated's new generation n-channel enhancement mode MOSFET series. It is designed to minimize on-resistance while maintaining superior switching performance. The device is distinct from its automotive-compliant counterpart, DMTH15H017SPSWQ, which is covered under a separate datasheet.

Replacement Considerations

The automotive-compliant variant DMTH15H017SPSWQ is available under a separate datasheet. Verify functional equivalence before substitution, as automotive parts may have different qualification standards. No other direct substitute part numbers are confirmed in the provided documentation.

FAQ

Is this part qualified for automotive applications?

No, this specific part number is not the automotive-compliant version. An automotive-compliant part is available under a separate datasheet (DMTH15H017SPSWQ).