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The DMTH3004LFGQ-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a low on-state resistance (RDS(ON)) of 5.5mΩ at VGS=10V, or 8.5mΩ at VGS=4.5V. The device supports a continuous drain current of 15A at TA=+25°C and up to 75A at TC=+25°C. It operates within a junction temperature range of -55°C to +175°C and is housed in a thermally efficient PowerDI3333-8 surface-mount package.
Verify the specific ordering suffix when purchasing. The suffix '-7' indicates a tape and reel packaging quantity of 2,000 units per reel. Confirm compliance requirements such as RoHS and halogen-free status directly with the manufacturer's documentation before finalizing procurement specifications.
Select this component for designs requiring a compact footprint and robust thermal performance in 30V systems. Ensure the gate drive voltage meets the minimum threshold for optimal RDS(ON) characteristics. Verify that the PCB layout accommodates the exposed drain pad for effective heat dissipation to maintain safe operating temperatures under load.
This part belongs to the DMTH series of N-channel MOSFETs from Diodes Incorporated. It utilizes the proprietary PowerDI3333-8 package technology, which provides enhanced thermal conductivity and reduced parasitic inductance compared to traditional plastic packages. The series is designed to meet the rigorous reliability standards required for modern automotive and industrial electronics.
Public confirmed substitute part numbers: None identified in official documentation.
Yes, the device is qualified to AEC-Q101 standards and is PPAP capable, making it suitable for automotive electronic systems.
The maximum junction temperature (TJ) rating is +175°C, allowing for reliable operation in high ambient temperature environments.