DMTH3004LK3-13

$1.12

Description：MOSFET N-CH 30V 21A/75A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3fd4fe0ed484 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 21A/75A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：21A (Ta), 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：44 nC @ 10 V
Vgs (Max)：+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds：2370 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.9W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMTH3004LK3-13

Overview

The DMTH3004LK3-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TO-252 (DPAK) surface-mount package and operates with a drain-source voltage of 30V. The device supports a continuous drain current of 75A at case temperatures up to +70°C, with a maximum on-resistance of 4mΩ at VGS=10V and 7mΩ at VGS=4.5V. It includes an integrated body diode and is qualified to AEC-Q101 standards for automotive reliability.

Feature Summary

Low on-state resistance optimized for high efficiency power management applications
Superior switching performance characterized by low input capacitance
Qualified to AEC-Q101 standards ensuring high reliability in demanding environments

Applications

Power Management Functions
DC-DC Converters
Backlighting

Procurement Notes

Verify the specific revision level of the datasheet DS37859 Rev. 3 - 2 against the component marking code H3004L YYWW to confirm manufacturing date and authenticity. Ensure procurement channels are authorized to prevent counterfeit components. Confirm RoHS compliance and Halogen-free status requirements align with project specifications before finalizing orders.

Selection Notes

Select this component when designing circuits requiring a 30V N-channel MOSFET capable of handling high continuous currents in a compact DPAK footprint. Consider the thermal resistance values provided for both ambient and case mounting conditions to ensure adequate heat dissipation. Verify that the gate drive voltage meets the minimum threshold required to achieve the specified low on-resistance characteristics.

Part Context

This part belongs to the DMTH series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a TO-252 package. The product line is designed to minimize on-state resistance while maintaining fast switching speeds, targeting modern power management solutions.