DMTH3004LPS-13

$0.39

Description：MOSFET N-CH 30V PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:f3833628e1bd Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：22A (Ta), 145A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：43.7 nC @ 10 V
Vgs (Max)：+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds：2370 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3.2W (Ta), 136W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMTH3004LPS-13

Overview

The DMTH3004LPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (VDSS) of 30V and a maximum continuous drain current (ID) of 145A at a case temperature of +25°C. The device exhibits a typical static drain-source on-resistance (RDS(ON)) of 3.8mΩ at VGS = 10V and 6mΩ at VGS = 4.5V. Total gate charge (Qg) is typically 43.7nC. It operates within a junction temperature range of -55°C to +175°C and utilizes the PowerDI5060-8 surface-mount package.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
Features an excellent Figure of Merit (FOM) defined by the product of gate-drain charge and on-resistance.
Includes 100% unclamped inductive switching testing to ensure operational reliability.
Utilizes a small form factor, thermally efficient package that enables higher density end products.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm compliance with RoHS directives and verify AEC-Q101 qualification status if automotive-grade reliability is required. Ensure thermal design accounts for the specified junction-to-case resistance values under actual operating conditions.

Selection Notes

Select this component for applications requiring low conduction losses and high current handling capabilities within a compact footprint. Evaluate the specific gate drive voltage requirements, as RDS(ON) varies significantly between 10V and 4.5V excitation levels. Consider the thermal dissipation characteristics relative to the PCB copper area and ambient operating environment.

Part Context

This part belongs to the DMTH3004 series of N-channel MOSFETs from Diodes Incorporated. It is housed in the PowerDI5060-8 package, which provides enhanced thermal performance compared to standard packages. The series is engineered specifically for modern power management circuits demanding high efficiency and space optimization.

Replacement Considerations

The DMTH3004LPSQ-13 is an automotive-compliant variant available under a separate datasheet. Verify pinout compatibility and electrical parameter alignment before substituting with other 30V N-channel MOSFETs in the PowerDI5060-8 package.