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Product Detailed Parameters
- Description：MOSFET N-CH 30V PWRDI5060
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：22A (Ta), 145A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：43.7 nC @ 15 V
- Vgs (Max)：+20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds：2370 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：136W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMTH3004LPSQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 30V and operates with a maximum junction temperature of +175°C. The device utilizes the PowerDI5060-8 surface-mount package. At VGS = 10V, the maximum on-resistance (RDS(ON)) is 3.8mΩ, supporting a continuous drain current of 145A at TC = +25°C. Gate-source voltage ratings are +20V and -16V.
Feature Summary
- Qualified to AEC-Q101 standards for automotive applications
- Supports 100% unclamped inductive switching for enhanced reliability
- Thermally efficient small form factor package design
- Manufactured in IATF 16949 certified facilities
Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify that the specific part number matches the required automotive qualification level. Confirm the package type corresponds to the intended PCB footprint. Ensure the ordering suffix aligns with the desired tape and reel quantity. Check for any recent product change notices or lifecycle status updates before finalizing procurement plans.
Selection Notes
Select this component when high thermal efficiency and low on-state losses are critical. The 175°C rating suits high ambient temperature environments. Verify gate drive voltage compatibility with the specified RDS(ON) thresholds. Consider the package dimensions for density requirements in the target application layout.
Part Context
This component belongs to the DMTH series of N-channel MOSFETs from Diodes Incorporated. It shares the PowerDI5060-8 packaging family with other devices in the lineup. The series targets automotive-grade power switching solutions requiring robust performance under demanding electrical and thermal conditions.
Replacement Considerations
Consult official datasheets for cross-reference data. Verify pinout compatibility and thermal resistance values. Ensure replacement parts meet the same AEC-Q101 qualification and PPAP requirements if used in automotive contexts.
