DMTH4001SPSQ-13

$0.90

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:8893c9af529f Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：225A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：144 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：10787 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta), 187.5W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8 (Type K)
Package / Case：8-PowerTDFN

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DMTH4001SPSQ-13

Overview

The DMTH4001SPSQ-13 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage (V_DSS) of 40V and a maximum on-resistance (R_DS(ON)) of 1.0mΩ at V_GS = 10V. The device supports a continuous drain current of 225A at a case temperature of +25°C and operates within a junction temperature range of -55°C to +175°C.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive applications.
Rated for operation up to +175°C junction temperature.
Features a thermally efficient PowerDI5060-8 package profile under 1.1mm.
Verified through 100% unclamped inductive switching (UIS) testing.

Applications

Engine Management Systems
Body Control Electronics
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2,500 units per reel. Confirm that the component meets RoHS directives and is halogen-free. Ensure design compatibility with IATF 16949 certified manufacturing processes required for automotive change control protocols.

Selection Notes

Select this component for high-current power switching environments requiring low conduction losses and robust thermal performance. The 40V rating and sub-milliohm resistance make it suitable for compact automotive power stages. Verify gate drive requirements against the specified threshold voltage and total gate charge parameters for optimal switching efficiency.

Part Context

This part belongs to the DMTH4001 series of automotive-grade MOSFETs designed by Diodes Incorporated. It utilizes silicon technology and is manufactured in facilities certified under IATF 16949 standards. The device is specifically engineered to address the stringent reliability and environmental demands of modern vehicle electronic architectures.

Replacement Considerations

Consult official manufacturer documentation for confirmed substitute part numbers. Cross-referencing requires matching electrical ratings, package dimensions, and automotive qualification status to ensure functional equivalence without compromising system safety or reliability.