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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V PowerDI101
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：0.85mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：150 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：13185 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：6W (Ta), 300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI1012-8
- Package / Case：8-PowerSFN
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Overview
The DMTH4001STLW-13 is a 40V N-channel enhancement mode MOSFET in a POWERDI1012-8 (TOLL) package. It features a maximum on-resistance of 0.85mΩ at VGS=10V and ID=30A, with a continuous drain current rating of 300A at TC=+25°C. The device supports junction temperatures up to +175°C and includes wettable flank terminals for improved optical inspection.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Features wettable flank terminals to facilitate improved optical inspection
- Includes 100% unclamped inductive switching (UIS) testing in production
Applications
- Motor control systems
- DC-DC converters
- Power management circuits
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 1500 units as documented in the official datasheet. Confirm that the required thermal performance aligns with the specified junction-to-case resistance values under your intended operating conditions.
Selection Notes
Select this component when low on-state losses are critical due to its sub-milliohm on-resistance. Ensure the application environment accommodates the +175°C maximum junction temperature rating. Verify that the PCB layout supports the exposed drain pad for optimal thermal dissipation from the POWERDI1012-8 package.
Part Context
This part belongs to Diodes Incorporated's new generation n-channel enhancement mode MOSFET series designed to minimize RDS(ON) while maintaining superior switching performance. It utilizes the POWERDI1012-8 (TOLL) surface-mount package technology.
Replacement Considerations
An automotive-compliant version is available under the separate part number DMTH4001STLWQ. Verify if AEC-Q101 qualification is required for the target application before selecting the standard industrial grade DMTH4001STLW-13.
FAQ
Is the DMTH4001STLW-13 qualified for automotive applications?
No, the standard DMTH4001STLW-13 is an industrial-grade device. An automotive-compliant part is available under the separate datasheet and part number DMTH4001STLWQ.
What is the purpose of the wettable flank feature?
The wettable flank design allows solder to extend along the side of the leads, enabling improved optical inspection of solder joints to ensure connection quality.
