DMTH4002SCTBQ-13

$0.76

Description：MOSFET BVDSS: 31V~40V TO263 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:0de156576849 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V TO263 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：192A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3mOhm @ 90A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：77.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：7180 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：6W (Ta), 166.7W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-263AB (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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DMTH4002SCTBQ-13

Overview

The DMTH4002SCTBQ is a 40V N-channel enhancement mode MOSFET in a TO263AB package. It features a maximum drain-source on-resistance of 3mΩ at VGS=10V and supports a continuous drain current of 192A at TC=+25°C. The device operates up to +175°C junction temperature, withstands ±20V gate-source voltage, and has a total power dissipation of 6W at TA=+25°C.

Feature Summary

Rated for operation up to +175°C junction temperature
100% unclamped inductive switching (UIS) tested in production
Low RDS(ON) minimizes power losses
Low Qg minimizes switching losses

Applications

Engine Management Systems
Body Control Electronics
DC-DC Converters

Procurement Notes

Verify the part number includes the 'Q' suffix for AEC-Q101 qualification and PPAP capability. Confirm the ordering suffix '-13' matches the required tape and reel packaging quantity. Ensure the application environment aligns with the specified thermal resistance and power dissipation limits under actual operating conditions.

Selection Notes

Select this component for automotive applications requiring high reliability and robustness against inductive switching events. Consider the low on-resistance for efficiency and the wide operating temperature range for high ambient environments. Verify that the TO263AB package fits the PCB layout constraints and thermal management strategy.

Part Context

This MOSFET belongs to Diodes Incorporated's automotive-grade product line. It is manufactured in IATF 16949 certified facilities and meets stringent automotive quality standards. The device is designed to replace older discrete solutions with higher performance and reliability in modern vehicle electronics.

Replacement Considerations

Check datasheets for other DMTH series parts with similar voltage and current ratings. Verify pinout compatibility and thermal characteristics before substitution.