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Product Detailed Parameters
- Description：MOSFET N-CH 40V 100A TO252
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：83 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4450 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：3.9W (Ta), 180W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252-3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMTH4004LK3-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TO252 (DPAK) surface-mount package and operates with a drain-source voltage of 40V. The device supports a continuous drain current of 100A at a case temperature of +25°C, with a maximum on-resistance of 3mΩ at VGS=10V and 5mΩ at VGS=4.5V. Total power dissipation reaches 180W at TC=+25°C. The component is rated for junction temperatures up to +175°C and meets AEC-Q101 standards.
Feature Summary
- Rated for operation in high ambient temperature environments up to 175°C
- Features 100% unclamped inductive switching capability for robust end applications
- Designed to minimize on-state resistance and gate charge for efficiency
Applications
- Engine Management Systems
- Body Control Electronics
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the standard DMTH4004LK3 datasheet aligns with project requirements, noting that an automotive-compliant variant exists under a separate document number. Ensure thermal management designs account for the specified junction-to-case thermal resistance values.
Selection Notes
Select this component when low on-resistance and superior switching performance are required for high-efficiency power management. The TO252 package provides a balance between current handling capabilities and board space constraints. Verify that the 40V breakdown voltage and 100A current ratings exceed the peak operational demands of the target circuit design.
Part Context
This part belongs to the DMTH4004 series of N-channel MOSFETs from Diodes Incorporated. The series focuses on minimizing power losses through low RDS(ON) characteristics while maintaining reliable switching speeds. The product utilizes silicon technology housed in a molded plastic green compound case with matte tin terminals.
Replacement Considerations
The DMTH4004LK3Q is available as an automotive-compliant alternative under a separate datasheet. Verify pinout compatibility and electrical parameter equivalence before substituting with other 40V N-channel MOSFETs in the TO252 package.
