DMTH4004SPSWQ-13

$0.60

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:68b17a2a5e35 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：31A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.7mOhm @ 90A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：68.6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4305 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：3.6W (Ta), 167W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH4004SPSWQ-13

Overview

The DMTH4004SPSWQ-13 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8/SWP package. It features a drain-source voltage rating of 40V and a maximum on-resistance of 2.7mΩ at VGS=10V. The device supports a continuous drain current of 185A at TC=+25°C and operates within a junction temperature range of -55°C to +175°C. Total gate charge is typically 68.6nC.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive applications.
Rated for operation up to +175°C junction temperature.
Features 100% unclamped inductive switching testing for robustness.

Applications

Engine management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the complete part number including the -13 suffix against official Diodes Incorporated documentation to ensure correct packaging specifications. Confirm that the PowerDI5060-8/SWP (Type UX) carrier matches your automated assembly requirements. Cross-reference the datasheet revision DS46036 Rev. 2 - 2 for the most current electrical parameters and mechanical dimensions before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring high thermal stability and low conduction losses in compact footprints. The 40V rating suits low-voltage automotive power distribution. Ensure PCB layout accommodates the exposed drain pad for optimal thermal dissipation given the 0.9°C/W junction-to-case resistance. Verify gate drive voltages align with the specified threshold characteristics for efficient switching performance.

Part Context

This device belongs to the DMTH4004 series of automotive-grade MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is produced in IATF 16949 certified facilities. The PowerDI5060-8 package provides a balance of electrical performance and thermal efficiency suitable for space-constrained electronic control units.

Replacement Considerations

Consult the official Diodes Incorporated cross-reference tools or contact technical support directly for verified substitute part numbers. Do not assume functional equivalence based solely on package similarity or generic parameter ranges without explicit manufacturer confirmation.

FAQ

Is the DMTH4004SPSWQ-13 halogen-free?

Yes, the device is defined as a "Green" product containing less than 900ppm bromine, less than 900ppm chlorine, and less than 1000ppm antimony compounds.