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Product Detailed Parameters
- Description：MOSFET N-CH 40V 100A TO220AB
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4.7mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：49.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3062 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2.8W (Ta), 125W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The DMTH4005SCT is a 40V N-channel enhancement mode MOSFET in a TO220-3 package. It features a maximum drain-source voltage of 40V and a continuous drain current of 100A at TC=+25°C. The static drain-source on-resistance is 4.7mΩ max at VGS=10V and ID=50A. Total power dissipation reaches 125W at TC=+25°C with a thermal resistance junction-to-case of 1.2°C/W. Operating temperature range spans -55°C to +175°C.
Feature Summary
- Qualified to AEC-Q101 standards for automotive reliability
- Rated for operation up to +175°C junction temperature
- 100% unclamped inductive switching tested
- Low input capacitance and leakage currents
Applications
- Engine Management Systems
- Body Control Electronics
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix 'SCT' corresponds to the TO220-3 tube packaging configuration as documented in the official datasheet. Confirm that the component meets RoHS compliance and halogen-free requirements if environmental specifications are mandatory for the target assembly process.
Selection Notes
Select this component when high current handling and robust thermal performance are required in through-hole applications. The TO220-3 package facilitates direct mounting to heat sinks, supporting high power dissipation scenarios where surface-mount options may be insufficient for thermal management.
Part Context
This device belongs to Diodes Incorporated's generation of low on-resistance MOSFETs designed for high-efficiency power management. It utilizes silicon technology optimized for fast switching characteristics while maintaining low gate charge values to minimize switching losses in demanding electronic environments.
Replacement Considerations
Consult official manufacturer documentation for verified equivalent part numbers. Ensure any substitute maintains identical pinout configurations, voltage ratings, and thermal characteristics to guarantee functional compatibility within existing circuit designs.
