DMTH4005SPSQ-13

$1.43

Description：MOSFET N-CH 40V 20.9A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:70ec9738b7a2 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 20.9A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：20.9A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：49.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3062 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.6W (Ta), 150W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMTH4005SPSQ-13

Overview

The DMTH4005SPSQ is a surface-mount N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a drain-source voltage of 40V and a maximum on-resistance of 3.7mΩ at VGS=10V. Continuous drain current reaches 100A at TC=+25°C, with a gate threshold voltage max of 4V. Total gate charge is 49.1nC. The device operates from -55°C to +175°C junction temperature.

Feature Summary

Rated for operation up to +175°C junction temperature
100% tested for unclamped inductive switching reliability
Low on-resistance minimizes conduction power losses
Low gate charge reduces switching energy consumption

Applications

Engine management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific suffix 'SQ' indicates AEC-Q101 qualification and PPAP capability when ordering. Confirm the '-13' suffix corresponds to the 2,500-unit tape and reel packaging format. Ensure the design environment supports the specified thermal resistance values for the PowerDI5060-8 package.

Selection Notes

Select this component for automotive applications requiring high-temperature resilience and robust inductive switching performance. The low RDS(ON) and Qg parameters make it suitable for efficient DC-DC conversion. Verify that the 40V rating aligns with the system's maximum operating voltage requirements.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio designed for high-reliability environments. It utilizes a lead-free, halogen-free green molding compound within the PowerDI5060-8 footprint. The device is manufactured in IATF 16949 certified facilities to meet stringent automotive quality standards.