DMTH4007LPSWQ-13

$0.33

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:f9c3cee5e8d1 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：15A (Ta), 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：29.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1895 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.7W (Ta), 83.3W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH4007LPSWQ-13

Overview

The DMTH4007LPSWQ is a single N-channel enhancement mode MOSFET designed for automotive applications. It features a maximum drain-source voltage (BVDSS) of 40V and operates within a junction temperature range of -55°C to +175°C. The device offers a maximum on-resistance (RDS(ON)) of 6.5mΩ at VGS=10V with an 85A continuous drain current, or 9.8mΩ at VGS=4.5V with a 70A current rating. Packaged in a PowerDI5060-8/SWP format, it supports AEC-Q101 qualification.

Feature Summary

Rated for operation up to +175°C junction temperature
100% unclamped inductive switching tested
Thermally efficient package design
Low input capacitance and fast switching speed

Applications

Motor controls
DC-DC converters
Load switches

Procurement Notes

Verify the specific ordering suffix '-13' when purchasing, as it indicates the tape and reel packaging quantity of 2500 units. Confirm that the required component meets AEC-Q101 qualification standards and PPAP requirements for your specific automotive application context before finalizing procurement.

Selection Notes

Select this component for designs requiring high thermal stability and robust performance in high ambient temperature environments. Ensure the gate drive voltage aligns with the specified RDS(ON) thresholds at either 4.5V or 10V to optimize efficiency and current handling capabilities within the system constraints.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio, specifically utilizing the PowerDI®5060-8/SWP package. It is manufactured in IATF 16949 certified facilities and is halogen and antimony free, adhering to 'Green' device definitions for environmental compliance.

Replacement Considerations

Consult official manufacturer substitution lists for verified alternatives. Do not assume cross-compatibility with other series without verifying pinout, electrical ratings, and package dimensions against the original datasheet specifications.