DMTH4007SPDW-13

FET, MOSFET Arrays Overview

The DMTH4007SPDW-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8/SWP package. It features a drain-source voltage (BVDSS) of 40V and a maximum continuous drain current of 45A at TC = +25°C. The device exhibits a low on-state resistance (RDS(ON)) of 8.6mΩ max at VGS = 10V and ID = 17A. Total gate charge is 41.9n max at VGS = 10V. Operating junction temperature ranges from -55°C to +175°C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration integrated into a single compact PowerDI5060-8/SWP package for space-constrained designs.
• Rated for operation up to +175°C junction temperature, suitable for high ambient temperature environments.
• Optimized for high conversion efficiency with minimized on-state losses and fast switching speeds.
• Qualified to JEDEC standards for high reliability and fully compliant with RoHS directives.

FET, MOSFET Arrays Applications

• Backlighting circuits
• Power-management functions
• DC-DC converters

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier containing 2500 units per reel. Confirm that the 'SWP' designation aligns with the required PowerDI5060-8/SWP (Type UXD) footprint and pad layout for your PCB design. Ensure thermal management strategies account for the specified thermal resistance values under steady-state conditions.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel topology is required within a small form factor. The 40V rating and 45A current capacity suit low-voltage power distribution tasks. Verify that the 8.6mΩ RDS(ON) meets conduction loss requirements at the intended operating current. Consider the +175°C rating if the application environment exceeds standard industrial temperature limits.

FET, MOSFET Arrays Part Context

This part belongs to Diodes Incorporated's DMTH series of dual MOSFETs. It utilizes the PowerDI®5060-8/SWP package, which provides enhanced thermal performance compared to traditional packages. The device is designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.

FET, MOSFET Arrays Replacement Considerations

The automotive-compliant variant DMTH4007SPDWQ is available under a separate datasheet. Verify pinout compatibility and thermal characteristics before substituting with other dual N-channel MOSFETs in the PowerDI5060-8 package family.

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current at case temperature of +25°C?

The maximum continuous drain current is 45A when the case temperature is maintained at +25°C.

Is this device qualified for automotive applications?

This specific part is qualified to JEDEC standards for high reliability. An automotive-compliant version, DMTH4007SPDWQ, is available under a separate datasheet.

What is the total gate charge specification?

The total gate charge (Qg) is typically 41.9n at VDS = 30V, ID = 20A, and VGS = 10V.