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Product Detailed Parameters
- Description：MOSFET N-CH 40V 15.7A PWRDI5060
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：15.7A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：7.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：41.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2082 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：2.8W (Ta), 136W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMTH4007SPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 40 V and a continuous drain current (I_D) of 100 A at case temperature of +25°C. The device exhibits a maximum static drain-source on-resistance (R_DS(ON)) of 7.6 mΩ at V_GS = 10 V and I_D = 20 A. Operating junction temperatures range from -55°C to +175°C. The component utilizes a PowerDI® 5060-8 surface-mount package with a profile under 1.1 mm.
Feature Summary
- Designed for high ambient temperature environments with operation up to +175°C
- Utilizes a thermally efficient PowerDI® 5060-8 package for cooler running applications
- Optimized for low on-state losses through minimized R_DS(ON)
- Features fast switching speed and low input capacitance
Applications
- Notebook battery power management
- Load switches
- DC-DC converters
- Motor control
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging configuration containing 2,500 units per carrier. Confirm that the required automotive reliability standards are met by selecting the separate automotive-compliant part number DMTH4007SPSQ if applicable, as this standard version is qualified to JEDEC standards referenced in AEC-Q.
Selection Notes
Select this component when designing circuits requiring a 40 V rating with high current handling capabilities up to 100 A at +25°C case temperature. Ensure the gate drive voltage supports the specified 10 V threshold for optimal on-resistance performance. Consider the thermal resistance characteristics and the requirement for FR-4 substrate mounting with adequate copper area for heat dissipation during operation.
Part Context
This device belongs to the DMTH4007 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It is specifically engineered to minimize on-resistance while maintaining superior switching performance. The product line targets portable electronics and power management systems where space constraints and thermal efficiency are critical design parameters.
Replacement Considerations
For automotive-grade requirements, consider the DMTH4007SPSQ which shares similar electrical characteristics but holds specific automotive compliance qualifications.
