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Product Detailed Parameters
- Description：MOSFET N-CH 40V 11.6A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：11.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：11.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1030 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：990mW (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (SWP) (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMTH4008LFDFW-7 is a 40V N-channel enhancement mode MOSFET designed for high-efficiency power management. It features an ultra-low on-state resistance of 11.5mΩ at VGS=10V and 18mΩ at VGS=4.5V, supporting continuous drain currents of 11.6A and 9.3A respectively. The device operates with a maximum junction temperature of +175°C and utilizes a compact U-DFN2020-6 package with a 0.6mm profile.
Feature Summary
- Rated to +175°C for high ambient temperature environments
- 100% unclamped inductive switching tested in production
- Low RDS(ON) minimizes on-state losses
- Totally lead-free and fully RoHS compliant
Applications
- Power-management functions
- DC-DC converters
- Backlighting
Procurement Notes
Verify the specific ordering suffix (e.g., -7 or -13) against the datasheet to confirm the correct packing quantity and carrier type. Ensure the application environment remains within the specified thermal limits and that PCB layout adheres to the recommended pad dimensions for optimal heat dissipation.
Selection Notes
Select this component when low profile and high reliability are required. The 0.6mm height suits space-constrained designs. Verify gate drive voltage compatibility, as RDS(ON) varies significantly between 4.5V and 10V conditions. Confirm suitability for high-frequency switching based on dynamic characteristics.
Part Context
This part belongs to Diodes Incorporated's DMTH series of N-channel MOSFETs. It is specifically engineered to balance minimal on-state resistance with superior switching performance. The device is intended for applications demanding robust end-use reliability and compliance with environmental standards.
Replacement Considerations
An automotive-compliant version is available under the separate part number DMTH4008LFDFWQ. Verify if AEC-Q qualification is necessary for the target application before selecting a substitute.
