DMTH4008LPDWQ-13

$1.05

Description：MOSFET 2N-CH 40V 10A PWRDI50
Series：-

SKU:831e0175a4de Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 40V 10A PWRDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：10A (Ta), 46.2A (Tc)
Rds On (Max) @ Id, Vgs：12.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：881pF @ 20V
Power - Max：2.67W (Ta), 39.4W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：PowerDI5060-8 (Type UXD)
Grade：Automotive
Qualification：AEC-Q101

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DMTH4008LPDWQ-13

Overview

The DMTH4008LPDWQ-13 is a dual N-channel enhancement mode MOSFET rated for 40V drain-source voltage and operating up to +175°C. It features a maximum on-resistance of 12.3mΩ at VGS=10V and 17.5mΩ at VGS=4.5V, supporting continuous currents of 46.2A at TC=+25°C. Packaged in PowerDI5060-8/SWP (Type UXD), it includes wettable flanks for optical inspection and meets AEC-Q101 automotive standards.

Feature Summary

Dual N-channel configuration integrated into a single compact package
Qualified to AEC-Q101 automotive standards with PPAP capability
Wettable flank design enables improved optical inspection reliability
Rated for high ambient temperatures up to +175°C

Applications

Motor Control
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific suffix '-13' corresponds to the 2,500-unit tape and reel packaging format. Confirm that the 'Q' designation aligns with the required AEC-Q101 qualification and IATF 16949 manufacturing certification for your automotive supply chain requirements.

Selection Notes

Select this component when dual channel isolation is required within a constrained footprint. The low thermal resistance supports high current applications. Ensure gate drive voltages match the specified thresholds for optimal RDS(ON) performance in your target circuit environment.

Part Context

This device belongs to Diodes Incorporated's automotive-grade MOSFET portfolio. It utilizes the PowerDI5060-8/SWP case style, designed for surface mount technology. The part integrates two independent N-channel MOSFETs to reduce board space compared to discrete solutions.

Replacement Considerations

Check datasheet pinout compatibility before substituting. Verify that alternative parts meet the same AEC-Q101 qualification level and maintain equivalent thermal resistance characteristics for the PowerDI5060-8 form factor.