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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 11.1A PWRDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：11.1A (Ta), 42A (Tc)
- Rds On (Max) @ Id, Vgs：15mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：805pF @ 20V
- Power - Max：2.6W (Ta), 37.5W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：PowerDI5060-8 (SWP)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMTH4011SPDWQ is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features a 40V drain-source voltage rating and operates up to +175°C junction temperature. The device offers a maximum on-resistance of 15mΩ at VGS=10V with a continuous drain current of 42A at TC=+25°C. Packaged in PowerDI5060-8/SWP, it supports high conversion efficiency and fast switching speeds.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Features 100% unclamped inductive switching capability for robust end applications
- Designed with low input capacitance and fast switching speed characteristics
Applications
- Automotive backlighting systems
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the required tape and reel packaging quantity of 2,500 units. Confirm that the component meets AEC-Q101 qualification standards and PPAP requirements if your application demands automotive-grade change control compliance. Ensure compatibility with IATF16949 certified manufacturing facilities.
Selection Notes
Select this component when a dual N-channel configuration is required within a compact PowerDI5060-8 footprint. Consider its 40V rating and low RDS(ON) for efficient power management in space-constrained automotive designs. Evaluate thermal resistance values against your specific PCB copper area and heat dissipation capabilities to ensure safe operation under load.
Part Context
This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio, specifically engineered for high reliability. It utilizes the PowerDI® 5060-8 package, which provides enhanced thermal performance compared to standard surface-mount packages. The device is manufactured in IATF16949 certified facilities to support strict automotive quality standards.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains the dual N-channel topology, 40V minimum rating, and compatible PowerDI5060-8 pinout to preserve circuit functionality without redesign.
FAQ
Is the DMTH4011SPDWQ qualified for automotive applications?
Yes, the device is qualified to AEC-Q101 standards and is supported by a PPAP.
What is the maximum operating junction temperature?
The device is rated for an operating and storage temperature range from -55°C to +175°C.
Does the device support unclamped inductive switching?
Yes, the datasheet specifies 100% unclamped inductive switching testing to ensure reliability.
