DMTH4014LDVWQ-13

$0.94

Description：MOSFET 2N-CH 40V 10.2A PWRDI3333
Series：-

SKU:ea7181c9ba9e Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 40V 10.2A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：10.2A (Ta), 27.5A (Tc)
Rds On (Max) @ Id, Vgs：15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：750pF @ 20V
Power - Max：1.16W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：PowerDI3333-8 (Type UXD)
Grade：Automotive
Qualification：AEC-Q101

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DMTH4014LDVWQ-13

Overview

The DMTH4014LDVWQ-13 is a dual N-channel enhancement mode MOSFET in a PowerDI3333-8/SWP package. It features a 40V drain-source voltage rating and operates up to +175°C junction temperature. On-resistance is 15mΩ max at VGS=10V (27.5A) and 25mΩ max at VGS=4.5V (22.0A). Continuous drain current reaches 27.5A at TC=+25°C. Total gate charge is 11.2nC at VGS=10V. Avalanche energy capability is 19.6mJ.

Feature Summary

Rated for high ambient temperatures with operation up to +175°C
100% unclamped inductive switching (UIS) tested in production
Wettable flank design enables improved optical inspection
Qualified to AEC-Q101 standards with PPAP capability

Applications

Wireless charging systems
DC-DC converters
Automotive power management

Procurement Notes

Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packing quantity and carrier type. Confirm that the component meets all required automotive quality standards, including AEC-Q101 qualification and PPAP requirements, before finalizing procurement specifications.

Selection Notes

Select this component for applications requiring robust performance in high-temperature environments. The low on-resistance minimizes conduction losses, while the fast switching speed supports efficient power conversion. Ensure thermal management aligns with the specified junction-to-ambient resistance values for the target PCB layout.

Part Context

This device belongs to the DMTH series of automotive-grade MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8/SWP surface-mount package designed for compact board layouts. The product line emphasizes reliability through rigorous UIS testing and compliance with strict automotive industry standards.

Replacement Considerations

Consult official manufacturer cross-reference lists for verified substitutes. Verify pinout compatibility and electrical parameters match the original design requirements when considering alternative part numbers.