DMTH4014LFVWQ-13

$0.77

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e2313a07a1dd Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：11.5A (Ta), 49.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：13.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：750 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3.1W
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMTH4014LFVWQ-13

Overview

The DMTH4014LFVWQ is a single N-channel enhancement mode MOSFET rated for a drain-source voltage of 40V. It operates within a junction temperature range of -55°C to +175°C and utilizes the PowerDI3333-8 package. The device features a maximum on-resistance of 13.7mΩ at VGS=10V and 26mΩ at VGS=4.5V, supporting continuous drain currents up to 49.8A at case temperatures of +25°C. It includes an integrated body diode with a forward voltage of 1.2V max.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Features wettable flank terminals to facilitate improved optical inspection during assembly
Undergoes 100% unclamped inductive switching (UIS) testing in production to ensure robustness
Qualified to AEC-Q101 standards and supported by PPAP for automotive applications

Applications

Automotive backlighting systems
DC-DC converter circuits
General power-management functions

Procurement Notes

Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging quantity and carrier type. Confirm that the component meets all required automotive quality standards, including AEC-Q101 qualification and PPAP support, before finalizing procurement specifications.

Selection Notes

Select this component when designing circuits requiring low on-state losses and high thermal stability. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance. Verify that the PCB layout accommodates the exposed drain pad for effective thermal dissipation to meet the specified power dissipation ratings.

Part Context

This part belongs to the DMTH series of automotive-grade MOSFETs manufactured by Diodes Incorporated. It is produced in IATF 16949 certified facilities and is designed to meet stringent automotive reliability requirements. The device is totally lead-free, fully RoHS compliant, and halogen and antimony free.

Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Do not substitute based solely on matching electrical parameters without confirming package compatibility and automotive qualification status.