DMTH4014LPSWQ-13

$0.21

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:b0626bbd0a9e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：43.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：14.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：750 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：4W (Ta), 46.9W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH4014LPSWQ-13

Overview

The DMTH4014LPSWQ is a 40V N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a maximum drain-source voltage of 40V and continuous drain current ratings of 43.5A at TC=25°C and 30.8A at TC=100°C. The device has a typical on-resistance of 14.5mΩ at VGS=10V and 25.0mΩ at VGS=4.5V. It operates within a junction temperature range of -55°C to +175°C.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive applications.
Features wettable flank terminals to facilitate improved optical inspection.
Rated for operation up to +175°C, suitable for high ambient temperature environments.
Undergoes 100% unclamped inductive switching (UIS) testing in production.

Applications

High frequency switching
Synchronous rectification
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel packaging quantity of 2500 units. Confirm that the component meets all applicable RoHS directives and halogen-free requirements for your project specifications. Ensure the selected supplier provides traceability documentation consistent with IATF 16949 certified manufacturing facilities.

Selection Notes

Select this component when designing circuits requiring robust performance in high-temperature automotive environments. Consider the low on-resistance characteristics for minimizing power losses in synchronous rectification topologies. Evaluate the thermal resistance values against your system's heat dissipation capabilities to ensure reliable operation under continuous load conditions.

Part Context

This part belongs to Diodes Incorporated's DMTH series of automotive-grade MOSFETs. It utilizes the PowerDI5060-8 surface-mount package designed for efficient thermal management. The device integrates an N-channel enhancement mode structure optimized for high conversion efficiency and fast switching speeds in compact form factors.

Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Cross-reference pin configurations and electrical parameters carefully before implementation.