ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V POWERDI506
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：43.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：14.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：805 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：4W (Ta), 46.9W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
Download product information
Overview
The DMTH4014SPSWQ-13 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage (BVDSS) of 40V and a maximum continuous drain current (ID) of 43.5A at TC = +25°C. The device exhibits a static drain-source on-resistance (RDS(ON)) of 14.8mΩ max at VGS = 10V and ID = 20A. It supports an operating temperature range from -55°C to +175°C and is qualified to AEC-Q101 standards.
Feature Summary
- Rated for operation up to +175°C junction temperature, suitable for high ambient environments
- Features wettable flank design to improve optical inspection reliability
- Manufactured in IATF 16949 certified facilities with PPAP capability for automotive change control
- Undergoes 100% unclamped inductive switching (UIS) testing in production
Applications
- High frequency switching circuits
- Synchronous rectification systems
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging configuration. Confirm that the component meets the required AEC-Q101 qualification and PPAP documentation standards for your specific automotive application requirements before finalizing procurement.
Selection Notes
Select this component when a 40V N-channel MOSFET with low RDS(ON) is required for automotive-grade applications. Ensure the thermal management design accommodates the specified thermal resistance values. Verify that the gate drive voltage aligns with the optimal RDS(ON) performance characteristics provided in the datasheet electrical tables.
Part Context
This part belongs to the DMTH series of automotive-grade MOSFETs designed by Diodes Incorporated. It utilizes the PowerDI5060-8 surface-mount package, which provides enhanced thermal dissipation compared to standard packages. The 'SWP' designation indicates the specific wettable flank variant within the PowerDI family.
Replacement Considerations
Consult official Diodes Incorporated cross-reference lists or distributor compatibility tools for verified substitute part numbers. Do not assume functional equivalence based solely on similar voltage or current ratings without verifying pinout and package dimensions.
