DMTH41M2SPSQ-13

DMTH41M2SPSQ-13

$2.47
  • Description:MOSFET BVDSS: 31V~40V POWERDI506
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:ceba908853e1 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET BVDSS: 31V~40V POWERDI506
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:225A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:1.2mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:138 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:11085 pF @ 20 V
  • FET Feature:-
  • Power Dissipation (Max):3.4W (Ta), 158W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:PowerDI5060-8 (Type K)
  • Package / Case:8-PowerTDFN

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DMTH41M2SPSQ-13

Overview

The DMTH41M2SPSQ is a 40V N-channel enhancement mode MOSFET designed for automotive applications. It features a maximum drain-source voltage (BVDSS) of 40V and a continuous drain current (ID) of 225A at TC = +25°C. The static drain-source on-resistance (RDS(ON)) is 1.2mΩ max at VGS = 10V and ID = 30A. It operates within a junction temperature range of -55°C to +175°C.

Feature Summary

  • Rated for operation in high ambient temperature environments up to +175°C
  • Manufactured in IATF 16949 certified facilities with AEC-Q101 qualification and PPAP capability
  • Features a thermally efficient PowerDI5060-8 package with a profile under 1.1mm

Applications

  • Engine management systems
  • Body control electronics
  • DC-DC converters

Procurement Notes

Verify the specific ordering suffix, such as '-13', which indicates tape and reel packaging quantities. Confirm that the component meets all applicable RoHS and REACH directives required by your region. Ensure the design accommodates the specified thermal resistance values for proper heat dissipation during operation.

Selection Notes

Select this component when designing circuits requiring robust performance in high-temperature automotive environments. The low on-resistance minimizes conduction losses, while the high current rating supports demanding power stages. Verify compatibility with the intended gate drive voltages and ensure adequate PCB copper area for optimal thermal management.

Part Context

This device belongs to Diodes Incorporated's DMTH series of automotive-grade MOSFETs. It utilizes the PowerDI5060-8 surface-mount package, which provides a compact footprint suitable for space-constrained designs. The part is specifically engineered to meet stringent automotive reliability standards.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

DMTH41M2SPSQ-13DMTH41M2SPSQ-13
$2.47
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