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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：191A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.7mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：61 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5433 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：3.75W (Ta), 114W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMTH41M3SPSWQ is a 40V N-channel enhancement mode MOSFET in a PowerDI5060-8/SWP package. It features a maximum drain-source on-resistance of 1.38mΩ at VGS=10V and a continuous drain current of 212A at TC=+25°C. The device supports an operating temperature range from -55°C to +175°C, with a total power dissipation of 3.75W at TA=+25°C and 114W at TC=+25°C. Thermal resistance is 40°C/W junction-to-ambient and 1.32°C/W junction-to-case.
Feature Summary
- Rated for operation up to +175°C for high ambient temperature environments
- Features wettable flank design for improved optical inspection
- Undergoes 100% unclamped inductive switching (UIS) testing in production
- Qualified to AEC-Q101 standards with PPAP capability
Applications
- Engine-management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel carrier configuration. Confirm that the component meets automotive quality requirements, including AEC-Q101 qualification and IATF16949 manufacturing certification. Ensure the selected part number matches the required PowerDI5060-8/SWP package type for proper integration.
Selection Notes
Select this component for applications requiring low on-resistance and high current handling within a thin profile. The device is suitable for automotive designs needing robustness against inductive switching events. Consider the thermal characteristics and package dimensions when designing heat dissipation strategies for high-temperature environments.
Part Context
This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio. It utilizes silicon technology housed in a molded plastic green molding compound. The package offers a profile of less than 1.1mm, making it appropriate for space-constrained electronic assemblies.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on voltage or current ratings without verifying pin configurations and thermal performance specifications.
