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Product Detailed Parameters
- Description：MOSFET N-CH 40V 100A PWRDI5060-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.8mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：79.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6968 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：3.03W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8 (Type K)
- Package / Case：8-PowerTDFN
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Overview
The DMTH41M8SPS-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 40 V and a continuous drain current (I_D) of 100 A at case temperatures of +25°C or +100°C. The device exhibits a maximum static drain-source on-resistance (R_DS(ON)) of 1.8 mΩ when driven at a gate-source voltage (V_GS) of 10 V with a drain current of 30 A. Total power dissipation is rated at 3.03 W, with a junction-to-case thermal resistance of 1.0 °C/W. Operating and storage temperature ranges extend from -55°C to +175°C.
Feature Summary
- Rated for operation up to +175°C junction temperature, suitable for high ambient temperature environments.
- Manufactured in a thermally efficient PowerDI5060-8 package with a profile under 1.1 mm.
- Qualified to AEC-Q101 standards for automotive-grade reliability.
- Verified through 100% unclamped inductive switching (UIS) testing during production.
Applications
- Engine management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the standard tape and reel packaging configuration containing 2,500 units per reel. Confirm that the component meets RoHS 3 compliance requirements and is free of halogens and antimony. Ensure the procurement channel provides valid traceability documentation for this automotive-qualified part number.
Selection Notes
Select this component for applications requiring low on-state resistance and robust switching performance within a 40 V system. Consider the 1.8 mΩ R_DS(ON) specification at 10 V gate drive for minimizing conduction losses. Evaluate the thermal characteristics against the PCB copper area available for heat dissipation, as the total power dissipation rating depends heavily on the thermal bias provided by the substrate.
Part Context
This device belongs to the DMTH41 series of N-channel MOSFETs designed for high-efficiency power management. It utilizes the PowerDI5060-8 (Type K) plastic molded package. The product line emphasizes minimized on-state resistance while maintaining superior switching capabilities, targeting automotive and industrial power conversion markets.
Replacement Considerations
The DMTH41M8SPSQ-13 is an alternative automotive-compliant variant available under a separate datasheet. Verify pinout compatibility and electrical parameter equivalence before substitution.
FAQ
What is the maximum pulsed drain current capability?
The device supports a pulsed drain current of 400 A with a 10 µs pulse duration and a duty cycle of 1%.
Is the internal body diode characterized for reverse recovery?
Yes, the typical reverse recovery time is 62 ns and the reverse recovery charge is 103 nC when tested at a forward current of 50 A and a di/dt of 100 A/µs.
