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Product Detailed Parameters
- Description：LINEAR IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：142A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：32 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2246 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：3.72W (Ta), 89.8W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMTH42M5LPSWQ-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI5060-8/SWP surface-mount packaging and is qualified to AEC-Q101 automotive standards. The device features a drain-source breakdown voltage (BVDSS) range of 31V to 40V, with a maximum continuous drain current (Id) of 100A at case temperature. Key electrical parameters include a low on-resistance (Rds(on)) of 2.5 milliohms at Vgs=10V and Id=50A, a gate charge (Qg) of 69.6 nanocoulombs at Vgs=10V, and a threshold voltage (Vgs(th)) of 1 volt. The component supports a maximum power dissipation of 125 watts at case temperature and operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- Automotive-grade reliability certified under the AEC-Q101 standard for robust performance in demanding environments.
- High thermal efficiency achieved through the PowerDI5060-8/SWP package design, supporting significant power dissipation capabilities.
- Low conduction losses enabled by a minimized on-resistance value optimized for high-current switching applications.
Applications
- Automotive power distribution systems requiring AEC-Q101 compliance
- DC-DC converter circuits for efficient voltage regulation
- Motor control interfaces utilizing N-channel switching
Procurement Notes
Verify the specific suffix 'Q' indicates AEC-Q101 qualification status against the manufacturer's official datasheet. Confirm the PowerDI5060-8/SWP package dimensions match the target PCB footprint requirements. Ensure the ordering quantity aligns with the standard tape-and-reel specifications provided in the product documentation.
Selection Notes
Select this component when an automotive-qualified N-channel MOSFET is required for high-current applications. The 40V rating suits 12V or 24V automotive systems. Evaluate the 2.5 milliohm on-resistance against thermal management constraints. Compare the 69.6 nanocoulomb gate charge with driver capabilities to ensure adequate switching speed without excessive drive current demands.
Part Context
This part belongs to the DMTH series of N-channel MOSFETs from Diodes Incorporated. The series focuses on providing high-performance switching solutions in compact surface-mount packages. The inclusion of the 'Q' suffix specifically denotes adherence to automotive quality standards, distinguishing it from general industrial variants within the same electrical family.
Replacement Considerations
Consult the manufacturer's cross-reference guide for verified substitutes. Ensure any replacement maintains the PowerDI5060-8/SWP footprint and meets or exceeds the 40V BVDSS and 100A Id ratings. Verify that alternative parts also hold AEC-Q101 certification if automotive qualification is mandatory.
