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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V POWERDI333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2182 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：3.5W (Ta), 65.2W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMTH43M7LFG is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 surface-mount package. It features a drain-source breakdown voltage (BVDSS) of 40V and a maximum continuous drain current (ID) of 100A at TC = +25°C. The device offers a low static drain-source on-resistance (RDS(ON)) of 3.0mΩ at VGS = 10V and 5.0mΩ at VGS = 5V. Total power dissipation reaches 65.2W at TC = +25°C with a thermal resistance junction-to-case (RθJC) of 2.3°C/W. Operating temperatures range from -55°C to +175°C.
Feature Summary
- Rated for operation up to +175°C, suitable for high ambient temperature environments
- Features 100% unclamped inductive switching testing in production for enhanced reliability
- Minimizes on-state losses through low RDS(ON) while maintaining superior switching performance
Applications
- Motor controls
- DC-DC converters
- Power management
Procurement Notes
Verify the specific ordering suffix against official documentation before procurement. The suffix indicates the packing quantity and carrier type; for example, the '-7' suffix corresponds to a 2,000-unit tape and reel, while the '-13' suffix denotes a 3,000-unit tape and reel. Confirm that the required packaging matches the project's assembly specifications to ensure compatibility with manufacturing equipment.
Selection Notes
Select this component when designing circuits requiring a 40V N-channel MOSFET capable of handling high currents up to 100A. The low RDS(ON) values at both 10V and 5V gate drive voltages make it efficient for various logic-level and standard drive applications. Ensure the PCB layout supports the exposed drain pad for optimal thermal dissipation, given the low thermal resistance junction-to-case rating.
Part Context
This part belongs to Diodes Incorporated's PowerDI3333-8 family of surface-mount MOSFETs. These devices are engineered to provide high current density and low thermal resistance within a compact footprint. The PowerDI series utilizes a molded plastic 'Green' compound and matte tin annealed terminal finish, complying with RoHS directives and offering halogen and antimony-free construction for environmentally compliant electronics.
Replacement Considerations
For direct replacements, consult the manufacturer's cross-reference tools or datasheets for parts sharing identical pinouts, voltage ratings, and package dimensions. Verify that any substitute component meets or exceeds the 40V BVDSS, 100A ID, and +175°C operating temperature requirements specified for the DMTH43M7LFG.
