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Product Detailed Parameters
- Description：MOSFET N-CH 40V PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：24A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：40.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2798 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2.62W (Ta), 65.2W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMTH43M8LFG-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 40V drain-source voltage rating and operates within a junction temperature range of -55°C to +175°C. The device provides a maximum continuous drain current of 100A at case temperatures of +25°C, with a typical static drain-source on-resistance of 3.0mΩ at VGS=10V. Packaged in a PowerDI3333-8 surface-mount format, it offers a total power dissipation of 65.2W at TC=+25°C.
Feature Summary
- Rated for operation up to +175°C junction temperature, suitable for high ambient environments
- Features low RDS(ON) to minimize on-state conduction losses
- Includes 100% unclamped inductive switching testing for enhanced reliability
- Qualified to AEC-Q101 standards for automotive-grade high reliability
Applications
- DC-DC Converters
- Power Management Systems
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance and halogen-free requirements as defined by the manufacturer's green product standards. Ensure the application environment supports the specified thermal characteristics and package limitations.
Selection Notes
Select this component when a 40V N-channel MOSFET with high current handling capability is required. The PowerDI3333-8 package is appropriate for applications needing efficient heat dissipation through the exposed drain pad. Consider the thermal resistance values and operating temperature limits to ensure proper system cooling design.
Part Context
This part belongs to the DMTH43M8 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series utilizes silicon technology and is designed for high-efficiency power management. The DMTH43M8LFG variant specifically denotes the standard commercial grade packaged in PowerDI3333-8, distinct from the automotive-compliant LFGQ version.
Replacement Considerations
The DMTH43M8LFGQ-7 is an automotive-compliant alternative within the same family. Verify if the specific AEC-Q101 qualification and associated documentation are required for the target application before substituting.
