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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V POWERDI333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：24A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：40.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2798 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2.62W (Ta), 65.2W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMTH43M8LFGQ-13-01 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 40V drain-source breakdown voltage and a continuous drain current of 24A at ambient temperature, or 100A at case temperature. The device exhibits a maximum on-resistance of 3.3 milliohms at 10V gate drive. It is housed in a PowerDI3333-8 surface-mount package with a maximum power dissipation of 2.62W. The component operates within a junction temperature range of -55°C to +175°C and meets AEC-Q101 automotive qualification standards.
Feature Summary
- Automotive-grade reliability compliant with AEC-Q101 standards for robust performance in demanding environments.
- Ultra-low on-resistance design minimizes conduction losses and improves overall system efficiency.
- Compact PowerDI3333-8 package provides high current density in a small footprint for space-constrained applications.
Applications
- Automotive power distribution systems
- High-side and low-side load switches
- DC-DC converter output stages
Procurement Notes
Verify the specific suffix '-01' against the manufacturer's official documentation to confirm exact electrical tolerances and packaging specifications. Ensure that the PowerDI3333-8 package dimensions align with your PCB layout requirements. Confirm AEC-Q101 compliance if automotive qualification is mandatory for your design. Cross-reference the datasheet revision date to ensure compatibility with your manufacturing processes.
Selection Notes
Select this component when a compact, automotive-qualified N-channel MOSFET with low on-resistance is required. The 40V rating suits 12V and 24V automotive systems. Compare the 2.62W power dissipation limit against your thermal management capabilities. Consider the 24A continuous current rating for load switching applications where size constraints preclude larger packages like PowerDI5060.
Part Context
This part belongs to the DMTH43M8 series from Diodes Incorporated, designed for high-efficiency power switching. The series utilizes advanced silicon technology to achieve low Rds(on) values. The DMTH43M8LFGQ variant specifically targets automotive applications requiring AEC-Q101 certification. The PowerDI3333-8 package offers a balance between thermal performance and board space savings compared to standard SO-8 packages.
Replacement Considerations
DMTH43M8LFGQ-13 is a compatible alternative within the same family, differing primarily in reel quantity rather than electrical characteristics. Verify pinout compatibility and thermal resistance parameters before substitution. Ensure the replacement part maintains the required AEC-Q101 qualification status for automotive designs.
