DMTH43M8LFVWQ-13

$0.32

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:41511bca63f1 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：23A (Ta), 96A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：36.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2737 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3.6W (Ta), 65W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMTH43M8LFVWQ-13

Overview

The DMTH43M8LFVWQ-13 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 package. It features a drain-source voltage (BVDSS) of 40 V and a maximum continuous drain current (ID) of 96 A at TC = +25°C. The device exhibits a low on-state resistance (RDS(ON)) of 4.3 mΩ max at VGS = 10V and 7.5 mΩ max at VGS = 4.5V. Total gate charge (Qg) is 36.9 nC at VGS = 10V. It operates within a junction temperature range of -55°C to +175°C.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive applications.
Features wettable flank terminals to facilitate improved optical inspection during assembly.
Undergoes 100% unclamped inductive switching (UIS) testing in production for enhanced reliability.
Manufactured in IATF 16949 certified facilities using halogen-free and antimony-free materials.

Applications

Automotive backlighting systems
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets all required automotive quality standards, including AEC-Q101 qualification and PPAP documentation, as these are critical for the intended application environment. Ensure compatibility with the specified PowerDI3333-8 footprint.

Selection Notes

Select this component when a 40V N-channel MOSFET is required for high-reliability automotive environments. The choice is driven by the need for low conduction losses indicated by the RDS(ON) values and the requirement for robust UIS performance. Consider the thermal characteristics and the specific gate drive voltages (4.5V or 10V) available in the target circuit design.

Part Context

This part belongs to the DMTH43M8 series of automotive-grade MOSFETs designed by Diodes Incorporated. It utilizes silicon technology and is packaged in the compact PowerDI3333-8 form factor. The series is engineered to meet stringent automotive industry requirements, ensuring consistent performance across varying ambient temperatures and operational stresses.