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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V POWERDI333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：23A (Ta), 96A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：36.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2737 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：3.6W (Ta), 65W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMTH43M8LFVWQ is a 40V N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features a maximum drain-source voltage of 40V and continuous drain currents of 96A at TC=25°C (VGS=10V) or 73A at VGS=4.5V. The on-resistance is 4.3mΩ max at VGS=10V and 7.5mΩ max at VGS=4.5V. Operating temperature ranges from -55°C to +175°C. It includes wettable flank terminals, 100% UIS testing, and AEC-Q101 qualification.
Feature Summary
- Qualified for automotive applications with PPAP capability and IATF 16949 manufacturing certification.
- Features wettable flank terminals to facilitate improved optical inspection during assembly.
- Undergoes 100% unclamped inductive switching (UIS) testing in production for enhanced reliability.
- Operates reliably in high ambient temperature environments up to +175°C junction temperature.
Applications
- Backlighting circuits
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packing quantity and carrier type. Confirm that the component meets all required automotive quality standards, including AEC-Q101 qualification and PPAP requirements, before finalizing procurement specifications.
Selection Notes
Select this component when designing for automotive systems requiring operation up to +175°C. Ensure the gate drive voltage supports the desired current rating, as RDS(ON) varies significantly between 10V and 4.5V gate thresholds. Verify thermal management capabilities align with the specified power dissipation limits.
Part Context
This part belongs to the DMTH series of automotive-grade N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 surface-mount package designed for compact PCB layouts. The device is specifically engineered to meet stringent automotive reliability standards and environmental compliance requirements.
Replacement Considerations
Consult official manufacturer substitution guides for verified alternatives. Cross-referencing requires matching voltage ratings, current capabilities, package dimensions, and thermal characteristics to ensure functional compatibility without design modification.
FAQ
What is the purpose of the wettable flank feature?
The wettable flank design allows solder to flow along the side of the terminal, enabling automated optical inspection (AOI) to verify solder joint integrity more effectively than standard packages.
Is this component suitable for high-temperature automotive environments?
Yes, the DMTH43M8LFVWQ is rated for a junction temperature range of -55°C to +175°C, making it ideal for high ambient temperature automotive applications.
