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Product Detailed Parameters
- Description：MOSFET N-CHANNEL 40V 100A TO252
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：3.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：38.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2693 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：88W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMTH43M8LK3-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 40V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +175°C. The device provides a maximum continuous drain current of 100A at case temperatures of +25°C, with a static drain-source on-resistance of 3.6mΩ at VGS=10V and 5.2mΩ at VGS=5V. Packaged in a TO252 (DPAK) housing, it is supplied in reels of 2,500 units.
Feature Summary
- Rated for operation up to +175°C junction temperature
- Guaranteed 100% unclamped inductive switching capability
- Qualified to AEC-Q101 standards for high reliability
- Lead-free finish and RoHS compliant
Applications
- Power management functions
- DC-DC converters
- Backlighting
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the standard commercial version matches the required application environment, noting that an automotive-compliant variant exists under a separate datasheet designation. Ensure compatibility with the specified TO252 footprint during procurement planning.
Selection Notes
Select this component for applications requiring low on-state losses and superior switching performance. The device is suitable for high ambient temperature environments due to its +175°C rating. Consider the thermal resistance characteristics when designing heat dissipation solutions, as power dissipation capabilities vary significantly between ambient and case mounting conditions.
Part Context
This part belongs to the DMTH43M8 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series is engineered to minimize on-state resistance while maintaining robust switching performance. The product utilizes silicon technology and is housed in a molded plastic TO252 case with a matte tin annealed terminal finish over a copper leadframe.
Replacement Considerations
An automotive-compliant alternative is available under the part number DMTH43M8LK3Q. Verify package dimensions and electrical parameters against existing designs before substitution.
FAQ
What is the maximum continuous drain current at a case temperature of +25°C?
The maximum continuous drain current is 100A when the case temperature is maintained at +25°C.
Is the device qualified for automotive applications?
The standard DMTH43M8LK3-13 is not explicitly designated as automotive-compliant; however, an automotive-compliant part is available under the separate datasheet for DMTH43M8LK3Q.
