DMTH43M8LPSQ-13

$1.19

Description：MOSFET N-CH 40V 22A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f98056b27d99 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 22A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：3.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：49 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3367 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.7W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

Download product information

DMTH43M8LPSQ-13

Overview

The DMTH43M8LPSQ-13 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 surface-mount package. It features a drain-source voltage (V_DSS) of 40 V and a continuous drain current (I_D) rating of 100 A at case temperature of +25°C. The device exhibits a maximum on-resistance (R_DS(ON)) of 3.3 mΩ at V_GS = 10 V and 5.0 mΩ at V_GS = 5 V. It supports an operating junction temperature range from -55°C to +175°C.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive applications
Rated for operation up to +175°C junction temperature
Features 100% unclamped inductive switching testing for robustness

Applications

BLDC motors
DC-DC converters
Load switches

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets RoHS 3 compliance requirements and ensure the intended application environment aligns with the specified thermal resistance and power dissipation limits provided in the datasheet.

Selection Notes

Select this component when a 40 V N-channel MOSFET with high current handling capabilities is required for space-constrained designs. The PowerDI5060-8 package offers low thermal resistance for efficient heat dissipation. Ensure gate drive voltages are sufficient to achieve the desired R_DS(ON) performance levels under expected load conditions.

Part Context

This part belongs to the DMTH43M8 series of automotive-grade MOSFETs manufactured by Diodes Incorporated. The series is designed to meet stringent automotive reliability standards, utilizing silicon technology within a lead-free, halogen-free molded plastic package suitable for high ambient temperature environments.

Replacement Considerations

Consult official Diodes Incorporated substitution guides or cross-reference tools for verified equivalent parts. Do not substitute based solely on matching electrical parameters without confirming package compatibility and automotive qualification status.