DMTH45M5LFVW-7

$0.26

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:672e3eb43e44 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：18A (Ta), 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：978 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3.5W (Ta), 51W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMTH45M5LFVW-7

Overview

The DMTH45M5LFVW-7 is a 40V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI3333-8/SWP (Type UX) packaging and supports operation up to +175°C. The device features a maximum on-resistance of 5.5mΩ at VGS=10V and 7.9mΩ at VGS=4.5V, with continuous drain currents of 71A and 59A respectively at TC=+25°C. Key electrical parameters include a gate-source voltage rating of ±20V, total gate charge of 13.9nC at VGS=10V, and a thermal resistance junction-to-case of 2.9°C/W.

Feature Summary

Rated for high ambient temperature environments with an operating range up to +175°C
Features wettable flank technology to improve optical inspection reliability
Includes 100% unclamped inductive switching (UIS) testing during production

Applications

Backlighting systems
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. The -7 suffix indicates a tape and reel quantity of 2,000 units, while the -13 suffix denotes 3,000 units per reel. Confirm that the required package type matches the SWP (Type UX) specification listed in the datasheet to ensure compatibility with automated assembly processes.

Selection Notes

Select this component when designing circuits requiring low on-state losses combined with robust switching performance. The device is suitable for applications demanding high current handling within a compact footprint. Ensure the design accounts for the specified thermal resistance values and verify that the gate drive voltage aligns with the provided RDS(ON) characteristics for optimal efficiency.

Part Context

This part belongs to the DMTH series of N-channel MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching capabilities. An automotive-compliant version of this component is available under the separate datasheet designation DMTH45M5LFVWQ.