DMTH45M5SFVW-13

DMTH45M5SFVW-13

$0.24
  • Description:MOSFET BVDSS: 31V~40V POWERDI333
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)

SKU:3b6d4a2ea6bd Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET BVDSS: 31V~40V POWERDI333
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:18A (Ta), 71A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:5.5mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id:3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:13.2 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1083 pF @ 20 V
  • FET Feature:-
  • Power Dissipation (Max):3.5W (Ta), 51W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount, Wettable Flank
  • Supplier Device Package:PowerDI3333-8 (SWP) Type UX
  • Package / Case:8-PowerVDFN

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DMTH45M5SFVW-13

Overview

The DMTH45M5SFVW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 40V drain-source breakdown voltage and a maximum on-resistance of 5.5mΩ at VGS=10V. The device supports a continuous drain current of 71A at TC=+25°C and operates within a junction temperature range of -55°C to +175°C. Packaged in a PowerDI3333-8/SWP (Type UX) footprint, it utilizes wettable flank technology for improved optical inspection.

Feature Summary

  • Rated for operation up to +175°C junction temperature
  • Features wettable flank design for enhanced optical inspection reliability
  • Includes 100% unclamped inductive switching (UIS) testing

Applications

  • Backlighting systems
  • Power-management functions
  • DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the required package variant matches the PowerDI3333-8/SWP (Type UX) mechanical specifications outlined in the datasheet. Ensure compatibility with RoHS 3 directives and halogen-free requirements before finalizing procurement orders.

Selection Notes

Select this component when high-efficiency power management requires low on-state resistance combined with superior switching performance. The device is suitable for applications demanding robustness against inductive loads due to verified UIS capability. Consider the +175°C rating for environments with elevated ambient temperatures where standard silicon limits would be exceeded.

Part Context

This part belongs to the DMTH series of N-channel MOSFETs from Diodes Incorporated. It shares functional similarities with other devices in the family but is distinguished by its specific 40V rating and PowerDI3333-8 package dimensions. The 'DMTH' prefix indicates a high-performance variant optimized for thermal and electrical efficiency in compact surface-mount designs.

Replacement Considerations

An automotive-compliant version is available under the separate datasheet as DMTH45M5SFVWQ.

DMTH45M5SFVW-13DMTH45M5SFVW-13
$0.24
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