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The DMTH45M5SFVW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 40V drain-source breakdown voltage and a maximum on-resistance of 5.5mΩ at VGS=10V. The device supports a continuous drain current of 71A at TC=+25°C and operates within a junction temperature range of -55°C to +175°C. Packaged in a PowerDI3333-8/SWP (Type UX) footprint, it utilizes wettable flank technology for improved optical inspection.
Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the required package variant matches the PowerDI3333-8/SWP (Type UX) mechanical specifications outlined in the datasheet. Ensure compatibility with RoHS 3 directives and halogen-free requirements before finalizing procurement orders.
Select this component when high-efficiency power management requires low on-state resistance combined with superior switching performance. The device is suitable for applications demanding robustness against inductive loads due to verified UIS capability. Consider the +175°C rating for environments with elevated ambient temperatures where standard silicon limits would be exceeded.
This part belongs to the DMTH series of N-channel MOSFETs from Diodes Incorporated. It shares functional similarities with other devices in the family but is distinguished by its specific 40V rating and PowerDI3333-8 package dimensions. The 'DMTH' prefix indicates a high-performance variant optimized for thermal and electrical efficiency in compact surface-mount designs.
An automotive-compliant version is available under the separate datasheet as DMTH45M5SFVWQ.