DMTH45M5SFVW-7

$0.26

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:cf491170bc1d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：18A (Ta), 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：5.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1083 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3.5W (Ta), 51W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMTH45M5SFVW-7

Overview

The DMTH45M5SFVW-7 is a 40V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI3333-8/SWP (Type UX) packaging with wettable flank technology. The device features a maximum drain-source voltage of 40V and a static drain-source on-resistance of 5.5mΩ at VGS=10V. Continuous drain current reaches 71A at TC=+25°C. It supports an operating temperature range from -55°C to +175°C, ensuring reliability in high ambient environments.

Feature Summary

Rated for operation up to +175°C junction temperature
Low RDS(ON) minimizes on-state power losses
Excellent Qgd x RDS(ON) figure of merit for switching efficiency
Wettable flank design enables improved optical inspection

Applications

Backlighting circuits
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packing quantity and carrier type. The DMTH45M5SFVW-7 designation corresponds to a 2,000-unit tape and reel configuration. Confirm compliance requirements such as RoHS and halogen-free status directly with the manufacturer's datasheet before procurement.

Selection Notes

Select this component when low on-state resistance and robust thermal performance are required. The +175°C rating makes it suitable for high ambient temperature applications. Ensure the 40V breakdown voltage aligns with system requirements. Verify that the PowerDI3333-8 package dimensions fit the PCB layout constraints.

Part Context

This part belongs to Diodes Incorporated's DMTH series of N-channel MOSFETs designed for high-efficiency power management. The series emphasizes minimized on-state resistance while maintaining superior switching performance. The DMTH45M5SFVW variant specifically targets applications requiring reliable operation under demanding thermal conditions.