DMTH45M5SFVWQ-7

$0.28

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:db41d3f89961 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：18A (Ta), 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：5.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1083 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3.5W (Ta), 51W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMTH45M5SFVWQ-7

Overview

The DMTH45M5SFVWQ-7 is a 40V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 40V and a static drain-source on-resistance (RDS(ON)) of 5.5mΩ at VGS=10V. The device supports a continuous drain current of 71A at TC=+25°C and operates within a junction temperature range of -55°C to +175°C. Packaged in PowerDI3333-8/SWP, it is AEC-Q101 qualified for automotive use.

Feature Summary

Rated for operation up to +175°C junction temperature
Low RDS(ON) minimizes on-state power losses
Excellent Qgd x RDS(ON) figure of merit
Wettable flank design enables improved optical inspection

Applications

Automotive backlighting systems
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix (-7 vs -13) against the required packing quantity before purchase. Confirm that the component meets AEC-Q101 qualification requirements if intended for automotive applications. Ensure the selected package variant matches the PCB footprint specifications provided in the datasheet.

Selection Notes

Select this component for high-current applications requiring low conduction losses and robust thermal performance. The 40V rating suits low-voltage DC-DC conversion tasks. Verify gate drive compatibility with the specified threshold voltage characteristics. Consider the PowerDI3333-8 package dimensions for board space constraints.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio designed for high ambient temperature environments. It utilizes silicon technology and is manufactured in IATF 16949 certified facilities. The device is halogen-free and RoHS compliant, supporting green manufacturing standards.