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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V POWERDI506
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：86A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：5.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1083 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：3.5W (Ta), 72W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMTH45M5SPSW-13 is a 40V N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8/SWP package. It features a maximum drain-source voltage (BVDSS) of 40V and a low on-state resistance (RDS(ON)) of 5.5mΩ at VGS=10V. The device supports a continuous drain current (ID) of 86A at TC=+25°C and operates within a junction temperature range of -55°C to +175°C. Key electrical parameters include a gate threshold voltage (VGS(TH)) of 2.0V to 3.5V, total gate charge (Qg) of 13.2nC, and input capacitance (Ciss) of 1083pF.
Feature Summary
- Rated for operation up to +175°C junction temperature, suitable for high ambient environments.
- Features wettable flank terminals to improve optical inspection reliability during assembly.
- Undergoes 100% unclamped inductive switching (UIS) testing in production for robustness.
- Designed for fast switching speeds with low input capacitance to minimize power losses.
Applications
- High-frequency switching circuits
- Synchronous rectification modules
- DC-DC converter designs
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging configuration. Confirm that the PowerDI5060-8/SWP (Type UX) package dimensions align with your PCB footprint requirements. Ensure compliance with RoHS and halogen-free specifications if required by your manufacturing standards. Cross-reference the datasheet revision number to confirm the most recent technical data is being utilized.
Selection Notes
Select this component when a 40V rating is sufficient and low conduction loss is critical. The 5.5mΩ RDS(ON) makes it appropriate for high-current applications requiring efficient power management. Consider the +175°C thermal rating for systems with limited cooling or high ambient temperatures. Verify that the gate drive voltage can reliably achieve the specified low on-resistance levels.
Part Context
This part belongs to Diodes Incorporated's DMTH series of N-channel MOSFETs designed for high-efficiency power management. It utilizes the PowerDI® 5060-8 surface-mount package, which offers improved thermal performance and solderability compared to traditional packages. The series targets modern electronics requiring compact footprints and robust switching capabilities.
Replacement Considerations
An automotive-compliant version is available under the separate part number DMTH45M5SPSWQ. Verify pinout compatibility and thermal characteristics when substituting with other 40V MOSFETs in the PowerDI5060-8 package.
