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The DMTH4M75SPSW-13 is a 40V N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8/SWP (Type UX) package. It features a maximum drain-source on-resistance of 0.75mΩ at VGS=10V and supports a continuous drain current of 337A at TC=+25°C. The device operates within a junction temperature range of -55°C to +175°C and includes wettable flank terminals for improved optical inspection.
Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel carrier configuration. Confirm that the PowerDI5060-8/SWP (Type UX) package variant matches the required footprint and thermal design parameters for the target application before finalizing procurement.
Select this component when low on-state losses are critical alongside high current handling capabilities. The 40V rating and 0.75mΩ resistance make it suitable for efficient power management. Ensure the PCB layout accommodates the exposed drain pad for optimal thermal dissipation given the 1.0°C/W junction-to-case thermal resistance.
This part belongs to Diodes Incorporated's new generation MOSFET lineup designed to minimize RDS(ON) while maintaining superior switching performance. It utilizes a molded plastic 'Green' molding compound with UL flammability classification 94V-0 and matte tin annealed terminals over a copper leadframe.
Consult official Diodes documentation for verified substitutes. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions.