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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：337A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：0.75mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：115 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：9434 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：3.9W (Ta), 150W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMTH4M75SPSWQ-13 is a 40V N-channel enhancement mode MOSFET in a PowerDI5060-8/SWP package. It features a maximum drain-source on-resistance of 0.75mΩ at VGS=10V and supports continuous drain currents up to 337A at TC=25°C. The device operates within a junction temperature range of -55°C to +175°C, with a total power dissipation of 150W at TC=25°C.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Features wettable flank design to improve optical inspection reliability
- Includes 100% unclamped inductive switching (UIS) testing for robustness
- Offers low profile construction suitable for thin application designs
Applications
- Engine-management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the specific suffix 'Q' indicates AEC-Q101 qualification and PPAP capability when sourcing automotive-grade units. Confirm the complete part number includes the '-13' designation for tape and reel packaging quantities. Ensure compatibility with IATF 16949 certified manufacturing requirements for your supply chain.
Selection Notes
Select this component for applications requiring high current handling in compact footprints. The low thermal resistance facilitates efficient heat dissipation in dense layouts. Consider the 40V rating for low-voltage automotive power distribution networks where minimal conduction losses are critical for system efficiency.
Part Context
This MOSFET belongs to Diodes Incorporated's automotive-grade PowerDI series. It utilizes a specialized SWP (Side Wettable Pad) variant of the PowerDI5060-8 package. The device is designed to meet stringent automotive quality standards while providing high performance in space-constrained electronic modules.
Replacement Considerations
Consult official substitution lists for verified equivalents. Generic replacements may lack the required AEC-Q101 qualification or PPAP documentation necessary for automotive engine management and body control applications.
