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Product Detailed Parameters
- Description：MOSFET N-CH 60V 100A TO263AB
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3.4mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：95.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4556 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：4.7W (Ta), 136W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The DMTH6004SCTB-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source voltage rating and a maximum continuous drain current of 100A at TC = +25°C. The device exhibits a typical static drain-source on-resistance of 2.9mΩ (maximum 3.4mΩ) at VGS = 10V and ID = 100A. Total gate charge is typically 95.4nC. It operates within a junction temperature range of -55°C to +175°C and utilizes a TO263AB surface-mount package.
Feature Summary
- Rated for operation up to +175°C, suitable for high ambient temperature environments
- Features 100% unclamped inductive switching testing for robust end applications
- Low on-resistance minimizes conduction power losses
- Low gate charge reduces switching losses
Applications
- Engine management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the specific datasheet revision against the manufacturer's official documentation before implementation. Confirm that the TO263AB package dimensions align with the target PCB footprint. Ensure thermal design accounts for the specified junction-to-case resistance values under actual operating conditions.
Selection Notes
Select this component when a 60V N-channel MOSFET capable of handling 100A continuous current is required. The low on-resistance makes it appropriate for high-efficiency power management designs. Verify that the gate drive voltage supports the 10V threshold for optimal RDS(ON) performance.
Part Context
This part belongs to the DMTH series of automotive-grade MOSFETs from Diodes Incorporated. It is designed for high-reliability applications requiring AEC-Q101 qualification. The product line emphasizes low on-resistance and fast switching capabilities for efficient power conversion.
Replacement Considerations
The automotive-compliant variant DMTH6004SCTBQ is available under a separate datasheet. Verify pinout compatibility and thermal characteristics when considering alternative manufacturers' parts.
