DMTH6004SK3-13

$1.05

Description：MOSFET N-CH 60V 100A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c553b671adf2 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 100A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3.8mOhm @ 90A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：95.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4556 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：3.9W (Ta), 180W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMTH6004SK3-13

Overview

The DMTH6004SK3-13 is a surface-mount N-channel enhancement mode MOSFET in a TO-252 (DPAK) package. It features a drain-source voltage of 60V and a continuous drain current of 100A at case temperature +25°C. The maximum on-resistance is 3.8mΩ at VGS=10V and ID=90A. Total power dissipation reaches 180W at TC=+25°C and 3.9W at TA=+25°C. Operating junction temperature ranges from -55°C to +175°C.

Feature Summary

Qualified to AEC-Q101 standards for high reliability
Rated for operation up to +175°C junction temperature
100% unclamped inductive switching tested
Lead-free finish with RoHS compliance

Applications

Engine Management Systems
Body Control Electronics
DC-DC Converters
Motor Control

Procurement Notes

Verify the specific ordering suffix matches the required packaging format, as standard tape and reel quantities are specified. Confirm that the component meets all applicable environmental directives relevant to the target deployment region. Ensure thermal management designs account for the specified thermal resistance values under actual operating conditions rather than idealized test parameters.

Selection Notes

Select this component when low on-state resistance is critical for minimizing conduction losses in high-current applications. The TO-252 package provides a balance between current handling capability and board space efficiency. Verify that gate drive voltages align with the specified thresholds for optimal performance and consider the thermal environment to ensure junction temperatures remain within safe operating limits.

Part Context

This device belongs to the DMTH series of automotive-grade N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology optimized for high-efficiency power management. The part is designed to minimize both static and dynamic power losses while maintaining robust switching characteristics suitable for demanding electronic control environments.