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Product Detailed Parameters
- Description：MOSFET N-CH 60V 19.7A/100A PWRDI
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：19.7A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.1mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：48.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3150 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.38W (Ta), 75W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMTH6005LFG-13 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a continuous drain current (ID) of 100A at TC = +25°C. The device offers a low static drain-source on-resistance (RDS(ON)) of 4.1mΩ at VGS = 10V and ID = 20A, or 7mΩ at VGS = 4.5V and ID = 5A. Total gate charge (Qg) is 48.7nC at VGS = 10V. It operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- Rated for operation up to +175°C junction temperature
- 100% unclamped inductive switching (UIS) tested in production
- Low RDS(ON) minimizes on-state power losses
- PowerDI3333-8 package occupies 33% less board area than SO-8
Applications
- Synchronous rectification
- Motor control
- DC-DC converters
- Power management
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets RoHS compliance standards and is free from halogen and antimony compounds if required by the target application specifications.
Selection Notes
Select this component when high efficiency and compact form factor are critical design constraints. The PowerDI3333-8 package provides superior thermal performance compared to standard surface-mount packages while significantly reducing footprint. Ensure the driving circuit can support the required gate threshold voltages for optimal RDS(ON) performance.
Part Context
This part belongs to the DMTH6005 series of N-channel enhancement mode MOSFETs designed for high-density power applications. It utilizes Diodes Incorporated's PowerDI technology to deliver robust electrical characteristics in a thermally efficient, lead-free plastic mold case suitable for automated surface-mount assembly processes.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-referencing requires matching BVDSS, ID, RDS(ON), package type, and thermal resistance parameters.
