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Product Detailed Parameters
- Description：MOSFET N-CH 60V PWRDI5060
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：20.6A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5.5mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：47.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2962 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta), 150W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMTH6005LPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 60 V and a continuous drain current (I_D) of 100 A at a case temperature of +25°C. The device exhibits a maximum static drain-source on-resistance (R_DS(ON)) of 5.5 mΩ when the gate-source voltage (V_GS) is 10 V and the drain current is 50 A. Total gate charge (Q_g) is specified as 47.1 nC under standard test conditions. The component operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Features 100% unclamped inductive switching testing for robust end applications
- Designed with low R_DS(ON) to minimize power losses during conduction
- Utilizes low Q_g characteristics to reduce switching losses
Applications
- High-frequency switching circuits
- Synchronous rectification systems
- DC-DC converters
Procurement Notes
Verify that the specific part number matches the required PowerDI5060-8 package configuration. Confirm compliance with RoHS directives and ensure the device meets the necessary thermal management requirements for the intended application environment. Cross-reference datasheet specifications against system constraints before finalizing procurement decisions.
Selection Notes
Select this component for designs requiring high efficiency and superior switching performance. Evaluate the thermal resistance parameters to ensure adequate heat dissipation capabilities. Consider the low on-resistance values for minimizing conduction losses in power management architectures where space constraints necessitate the use of compact surface-mount packages.
Part Context
This device belongs to the DMTH6005 series of N-channel MOSFETs from Diodes Incorporated. It utilizes the PowerDI5060-8 package, which provides an exposed drain pad for efficient thermal transfer. The product line emphasizes high reliability and compliance with automotive standards, offering a solution for modern power electronics demanding both high current handling and low thermal impedance.
Replacement Considerations
An automotive-compliant version of this component is available under the separate part number DMTH6005LPSQ. Verify pinout compatibility and electrical parameter tolerances when considering alternative devices from other manufacturers.
