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Product Detailed Parameters
- Description：MOSFET N-CH 60V 14.2A/59A TO252
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：14.2A (Ta), 59A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：10mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：33.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1925 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta), 60W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252-3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMTH6009LK3Q-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 60V and a continuous drain current (ID) of 59A at TC = +25°C. The device offers a maximum on-resistance (RDS(ON)) of 10mΩ at VGS = 10V and 12.8mΩ at VGS = 4.5V. It operates within a junction temperature range of -55°C to +175°C, with a total power dissipation of 60W when mounted on an infinite heatsink.
Feature Summary
- Qualified to AEC-Q101 standards for automotive applications
- Rated for operation up to +175°C junction temperature
- Low RDS(ON) minimizes on-state conduction losses
- Small form factor thermally efficient package enables higher density end products
Applications
- Power-management functions
- DC-DC converters
- Backlighting
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2,500 units as defined in the manufacturer's documentation. Confirm that the component meets the required IATF 16949 manufacturing facility standards if automotive change control protocols are mandated for the target application.
Selection Notes
Select this component for designs requiring high thermal stability and low conduction losses in compact footprints. Ensure the gate drive voltage supports the specified RDS(ON) thresholds at 10V or 4.5V. Verify that the PCB layout accommodates the TO252 (DPAK) package dimensions and provides adequate copper area for thermal management to sustain the rated power dissipation.
Part Context
This part belongs to the DMTH series of N-channel MOSFETs from Diodes Incorporated. It is designed specifically to meet stringent automotive requirements, supported by PPAP capability. The device utilizes advanced silicon technology to achieve a favorable figure of merit (Qgd x RDS(ON)), optimizing performance for switching applications.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains AEC-Q101 qualification and compatible pinout configurations.
