DMTH6009LPS-13

$0.81

Description：MOSFET N-CH 60V PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:903623eb23c1 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：11.76A (Ta), 89.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：10mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15.6 nC @ 4.5 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：1925 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.8W (Ta), 136W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMTH6009LPS-13

Overview

The DMTH6009LPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and a maximum continuous drain current of 89.5A at TC = +25°C. The device exhibits a low on-state resistance of 10mΩ at VGS = 10V and 12mΩ at VGS = 4.5V. Total gate charge is 33.5nC at VGS = 10V. It operates within a junction temperature range of -55°C to +175°C and is housed in a PowerDI5060-8 surface-mount package.

Feature Summary

Rated for operation up to +175°C, suitable for high ambient temperature environments
100% unclamped inductive switching (UIS) tested in production for robustness
Low RDS(ON) minimizes power losses during conduction
Low QG minimizes switching losses during transitions

Applications

High frequency switching
Synchronous rectifications
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2500 units as documented. Confirm that the component meets RoHS, REACH, and Halogen/Antimony-free requirements if environmental compliance is mandatory for the target assembly. Ensure the design accommodates the specified thermal resistance values for the intended PCB copper area.

Selection Notes

Select this component when a 60V rating with low on-resistance is required for efficient power management. The PowerDI5060-8 package provides a balance between current handling capability and board space. Consider the 175°C junction temperature rating for applications requiring operation in elevated thermal environments without derating the current excessively.

Part Context

This part belongs to the DMTH6009LPS series of N-channel MOSFETs from Diodes Incorporated. It utilizes the PowerDI5060-8 surface-mount package technology. The product is designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.

Replacement Considerations

An automotive-compliant version is available under the separate part number DMTH6009LPSQ. Verify pinout compatibility and electrical parameter equivalence before substituting with other 60V N-channel MOSFETs in the PowerDI5060-8 package.

FAQ

Is the DMTH6009LPS-13 qualified for automotive applications?

The standard DMTH6009LPS-13 is not explicitly stated as automotive-qualified in its primary datasheet. An automotive-compliant variant, DMTH6009LPSQ, is available under a separate datasheet.