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Product Detailed Parameters
- Description：MOSFET N-CH 60V PWRDI5060
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：12.9A (Ta), 89.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：10mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：29.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1572 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.8W (Ta), 136W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMTH6009SPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +175°C. The device utilizes a PowerDI5060-8 surface-mount package. Key electrical parameters include a maximum on-resistance of 10mΩ at VGS=10V and 13.5mΩ at VGS=4.5V. Continuous drain current ratings are 89.5A at TC=+25°C and 12.9A at TA=+25°C. Total gate charge is specified at 29.3nC.
Feature Summary
- Rated for operation up to +175°C, suitable for high ambient temperature environments
- Features 100% unclamped inductive switching testing for robust end applications
- Designed with low RDS(ON) to minimize power losses
- Incorporates low QG characteristics to reduce switching losses
Applications
- High frequency switching
- Synchronous rectifications
- DCDC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the required tape and reel packing quantity of 2,500 units. Confirm that the standard commercial grade part aligns with your design requirements, as automotive-grade alternatives with specific change control and AEC-Q qualification utilize a different 'Q-suffix'. Ensure compatibility with JEDEC standards for high reliability if applicable to your system specifications.
Selection Notes
Select this component when a 60V N-channel MOSFET with optimized thermal performance in a compact PowerDI5060-8 footprint is required. The device offers a balance of low conduction resistance and fast switching speeds. Consider the continuous drain current derating curves based on your specific case or ambient temperature operating conditions to ensure safe operation within the thermal limits.
Part Context
This component belongs to the DMTH series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to provide superior switching performance while maintaining low on-state resistance. The series targets high-efficiency power management solutions, utilizing advanced silicon technology to achieve high reliability and robustness in demanding electronic applications.
Replacement Considerations
For automotive applications requiring specific change control, AEC-Q qualification, and IATF 16949 manufacturing, refer to the related automotive grade parts with the 'Q-suffix'. Consult the manufacturer's automotive product listing for compatible equivalents that meet stricter automotive industry standards.
