DMTH6010LPSQ-13

$1.29

Description：MOSFET N-CH 60V 13.5A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:bfae97d821ed Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 13.5A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：13.5A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：41.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2090 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.6W (Ta), 136W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMTH6010LPSQ-13

Overview

The DMTH6010LPSQ-13 is a surface-mount N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a drain-source voltage of 60V and a continuous drain current of 100A at TC = +25°C, or 13.5A at TA = +25°C. The device has a maximum on-resistance of 8mΩ at VGS = 10V and 12mΩ at VGS = 4.5V. It operates within a junction temperature range of -55°C to +175°C.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive applications.
Rated for operation up to +175°C junction temperature.
Subjected to 100% unclamped inductive switching (UIS) testing during production.

Applications

Engine management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets all applicable RoHS directives and environmental compliance requirements for the target market. Ensure the selected variant aligns with the intended thermal management strategy and PCB layout specifications.

Selection Notes

Select this component when high ambient temperature tolerance and robust UIS performance are required. The low on-resistance minimizes conduction losses, while the small footprint supports space-constrained designs. Verify gate drive voltage compatibility with the specified RDS(ON) thresholds.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio. It utilizes the PowerDI5060-8 package to provide efficient thermal dissipation through an exposed drain pad. The device is manufactured in IATF 16949 certified facilities to support strict automotive change control requirements.