DMTH6010SK3-13

$1.27

Description：MOSFET N-CH 60V 16.3A/70A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c2dbd114adf7 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 16.3A/70A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：16.3A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：36.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1940 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMTH6010SK3-13

Overview

The DMTH6010SK3-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 60 V and a gate-source voltage (V_GSS) rating of ±20 V. The device provides a continuous drain current (I_D) of 70 A at a case temperature of +25 °C, with a maximum static drain-source on-resistance (R_DS(ON)) of 8 mΩ measured at V_GS = 10 V and I_D = 20 A. Total gate charge (Q_g) is typically 38.1 nC at V_GS = 10 V. The component operates within a junction temperature range of -55 °C to +175 °C.

Feature Summary

Rated for operation up to +175°C junction temperature, suitable for high ambient environments
100% unclamped inductive switching (UIS) tested in production for robustness
Advanced technology optimized for low R_DS(ON) and excellent Qgd x R_DS(ON) figure of merit
Qualified to AEC-Q101 standards for automotive-grade reliability

Applications

Power management functions
DC-DC converters
Backlighting circuits

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the required thermal performance aligns with the specified junction-to-ambient resistance values when mounted on standard FR-4 substrates. Ensure design parameters respect the absolute maximum ratings for pulsed drain current and avalanche energy limits during transient events.

Selection Notes

Select this component for applications requiring high efficiency power management where low conduction losses are critical. The TO-252 package offers a small form factor with thermally efficient characteristics for higher density designs. Consider the 175°C operating capability if the application environment exceeds standard industrial temperature ranges. Verify gate drive requirements against the typical threshold voltage specifications.

Part Context

This part belongs to the DMTH6010 series of N-channel MOSFETs from Diodes Incorporated. It utilizes a TO-252 (DPAK) case constructed from molded plastic with a matte tin annealed terminal finish over a copper leadframe. The device is classified as a 'Green' product, being halogen and antimony free, and complies with RoHS directives.