DMTH6012LPSWQ-13

$0.83

Description：MOSFET N-CH 60V 11.5/50.5A PWRDI
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:62643cf7bfa5 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 11.5/50.5A PWRDI
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：11.5A (Ta), 50.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：14mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13.6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：785 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.8W (Ta), 53.6W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8 (Type Q)
Package / Case：8-PowerTDFN

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DMTH6012LPSWQ-13

Overview

The DMTH6012LPSWQ-13 is a surface-mount N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage (V_DSS) of 60 V and a maximum continuous drain current (I_D) of 50.5 A at case temperature of +25°C. The device exhibits a low on-resistance (R_DS(ON)) of 14 mΩ at V_GS = 10 V and 21 mΩ at V_GS = 4.5 V. Total gate charge (Q_g) is 13.6 nC at V_GS = 10 V. Operating junction temperature ranges from -55°C to +175°C.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive applications.
Rated for operation up to +175°C junction temperature.
Features wettable flank terminals to facilitate optical inspection.
Subjected to 100% unclamped inductive switching (UIS) testing during production.

Applications

Engine management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific package variant against the datasheet before procurement. The component is available in two distinct configurations: Type Q and Type UX, both utilizing the PowerDI5060-8/SWP form factor. Confirm that the ordered part matches the required mechanical footprint and terminal finish specifications for your assembly process.

Selection Notes

Select this component when designing circuits requiring high thermal stability and robustness in automotive environments. The low R_DS(ON) minimizes conduction losses, while the +175°C rating supports high ambient temperature operations. Ensure the gate drive voltage aligns with the specified thresholds for optimal switching performance and efficiency.

Part Context

This MOSFET belongs to the DMTH series designed specifically for automotive-grade reliability. Manufactured in IATF 16949 certified facilities, it meets stringent industry requirements for change control and quality assurance. The device integrates advanced silicon technology within a compact, lead-free, and halogen-free molded plastic package.